| 摘要 |
The invention relates to heterostructures used for semiconductor devices, mainly for field-effect transistors. The aim of the invention is to increase the conductivity of the channel layer of a semiconductor heterostructure and, thereby to increase working currents and power of the field-effect transistors. The inventive semiconductor heterostructure for a field-effect transistor comprises a monocrystalline substrate (1) made of AlN, a template layer (2) made of AlN, a channel layer (5) made of GaN and a barrier layer (6) made of Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N. Said heterostructure also comprises transition (3) and a buffer (4) layers which aremade of Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N and Al<SUB>z</SUB>Ga<SUB>1-z</SUB>N, respectively, and are disposed one above the other between the template (2) and channel (5) layers, wherein the y value on the boundary with the template layer (2) is equal to 1 and on the boundary with the buffer layer (4) is equal to the value z thereof, 0.3=x=0.5 and 0.1=z=0.5. In the inventive heterostructure, the buffer layer (4) can be doped with Si on the boundary with the channel layer (5) at a depth ranging from 50 to 150 Å. |
