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发明名称
摘要
<p>A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.</p>
申请公布号
JP2008502156(A)
申请公布日期
2008.01.24
申请号
JP20070515581
申请日期
2005.06.03
申请人
发明人
分类号
H01L21/3205;H01L21/28;H01L21/336;H01L21/4763;H01L21/60;H01L23/04;H01L23/10;H01L23/34;H01L23/485;H01L23/52;H01L29/417;H01L29/423;H01L29/49;H01L29/78
主分类号
H01L21/3205
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