发明名称 |
Method of Programming Flash Memory Device |
摘要 |
Flash memory devices include a memory array having a plurality of NAND strings of EEPROM cells therein. A word line driver is provided to improve programming efficiency. The word line driver is electrically coupled to the memory array by a plurality of word lines. The word line driver includes a plurality of pass voltage switches. These switches have outputs electrically coupled by diodes to the plurality of word lines. Methods of programming flash memory devices include applying a pass voltage to a plurality of unselected word lines in a non-volatile memory array while simultaneously applying a sequentially ramped program voltage to a selected word line in the non-volatile memory array. The sequentially ramped program voltage has a minimum value that is clamped by a word line driver to a level not less than a value of the pass voltage.
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申请公布号 |
US2008019183(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20070833546 |
申请日期 |
2007.08.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE DONG-HYUK;BYEON DAE-SEOK |
分类号 |
G11C16/02 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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