| 摘要 |
In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing C<SUB>x</SUB>F<SUB>y </SUB>(x is 3 or less and y is 8 or less), C<SUB>4</SUB>F<SUB>8</SUB>, a rare gas and O<SUB>2 </SUB>is supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.
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