| 摘要 |
This invention relates to a method for depositing silicon carbide materia l onto a substrate such that the resulting substrate has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixtur e comprising a chlorosilane gas, a carbon- containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000 °C but less than 2000 °C; with the pr oviso that the pressure within the reaction chamber is maintained in the ran ge of 0.1 to 760 torr. This invention also relates to a method for depositin g silicon carbide material onto a substrate such that the resulting substrat e has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon- containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a rea ction chamber containing a substrate; and b. heating the substrate to a temp erature of greater than 1000 °C but less than 2000 °C; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. |
