FIELD-EFFECT TRANSISTOR, TFT DRIVE CIRCUIT, PANEL, AND DISPLAY

摘要

PROBLEM TO BE SOLVED: To provide the structure of a novel field-effect transistor that uses a semiconductor nanowire to have fine transistor characteristics. SOLUTION: The field-effect transistor includes a board 40, gate electrode 41, a gate insulating film 42, which are arranged in increasing order, and the semiconductor nanowire 45 and a source electrode 43/drain electrode 44 that are formed on the gate insulating film 42. In a contact area between the semiconductor nanowire 45 and the source electrode 43/drain electrode 44, the surface of the semiconductor nanowire 45 is covered with the constituent material of the source electrode 43/drain electrode 44. COPYRIGHT: (C)2008,JPO&INPIT