发明名称 |
Method for fabricating single-crystal GaN based substrate |
摘要 |
A GaN based substrate is obtained with a simple etching. The GaN based substrate is separate from another base substrate with the etching. The whole process is easy and costs low. The substrate is made of a material having a matching lattice length for a lattice structure so that the substrate has good characteristics. And the GaN based substrate has good heat dissipation so that the stability and life-time of GaN based devices on the GaN based substrate are enhanced even when they are constantly operated under a high power.
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申请公布号 |
US2008017100(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20060526067 |
申请日期 |
2006.09.25 |
申请人 |
NATIONAL CENTRAL UNIVERSITY |
发明人 |
CHYI JEN-INN;CHEN GUAN-TING |
分类号 |
C30B23/00 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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