| 摘要 |
Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11 , a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16 , a pollution measuring beam column 6 A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13 , and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.
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