| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to reduce the number of cracks by radiating laser beam into a semiconductor layer. A layer including a semiconductor layer(103) is formed on a glass substrate(100). The layer including the semiconductor layer is heated. Laser beam, which is successive oscillation laser beam, is radiated to the heated layer including the semiconductor layer. The thermal expansion rates of the glass substrate is 6x10^-7/°C to 38x10^-7/°C. After the heat process and before the radiation process, the whole stress of the whole layer including the semiconductor layer is -500N/m to +50N/m.</p> |
