| 摘要 |
<p>An organic thin film transistor substrate and a manufacturing method thereof are provided to prevent overflow in an organic semiconductor layer by implementing selectively the organic semiconductor layer on source and drain electrodes and a gate insulation layer. An organic thin film transistor substrate includes gate and data lines, an organic thin film transistor, first and second connection parts(107,108), a pixel electrode(106), a protection layer(136), and a bank insulation layer(110). The gate line is formed on a substrate. The data line which defines sub-pixel region is formed to cross with the gate line at both sides of an insulation layer. The organic thin film transistor is connected to the gate line. The first and second connection parts connect the data line and organic thin film transistor, and the pixel electrode and organic thin film transistor. The pixel electrode is formed on the sub-pixel region. The protection layer formed in parallel with the gate line covers the organic thin film transistor and a peripheral area of the organic thin film transistor. The bank insulation layer includes first and second contact holes for connecting the first connection part and the organic thin film transistor, and the second connection part and the organic thin film transistor, and first and second sub-banks for filling the gate insulation layer and the protection layer.</p> |
