| 摘要 |
<P>PROBLEM TO BE SOLVED: To properly keep the working accuracy of an element in a logic region, and to prevent a junction leakage in the element separation insulating film of a memory region, concerning a semiconductor device mounting the memory region and the logic region by mixture. <P>SOLUTION: The semiconductor device 100 includes a semiconductor substrate 102 where a DRAM part and a Logic part are mounted mixed, and surface height is made to be substantially the same over the DRAM part and the Logic part; a first STI film 154a formed on the Logic part of the semiconductor substrate 102; and a second STI film 154b formed on the DRAM part of the semiconductor substrate 102, and having the surface height being larger than that of the semiconductor substrate 102. The difference between the surface height of the first STI film 154a and that of the semiconductor substrate 102 is smaller than the difference between the surface height of the second STI film 154b and that of the semiconductor substrate 102. It is preferable that the surface height of the first STI film 154a be substantially the same as that of the semiconductor substrate 102. <P>COPYRIGHT: (C)2008,JPO&INPIT |
