发明名称 Wafer laser processing method
摘要 A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.
申请公布号 US2008020548(A1) 申请公布日期 2008.01.24
申请号 US20070826911 申请日期 2007.07.19
申请人 DISCO CORPORATION 发明人 MORIKAZU HIROSHI;OBA RYUGO;MORISHIGE YUKIO;TSUCHIYA TOSHIO;YAMAGUCHI KOJI
分类号 H01L21/78 主分类号 H01L21/78
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