发明名称 AN OPTICAL INSPECTING METHOD OF A PLASMA PROCESSING DEGREE OF A SiON FILM
摘要 <p>An optical inspecting method of a plasma processing degree of a SiON film includes: firstly, depositing the SiON film on a semiconductor wafer by using a chemical vapor deposition,and then performing the plasma processing on the SiON film, and finally performing the optical inspectin to the plasma processing degree of the SiON film using optical inspecting method. The plasma processing degree thereof is judged based on the change of the SiON film's refractivity or reflectivity.</p>
申请公布号 WO2008009165(A1) 申请公布日期 2008.01.24
申请号 WO2006CN01542 申请日期 2006.07.03
申请人 HE JIAN TECHNOLOGY(SUZHOU)CO.LTD.;CHEN, HOU;TSAI, MENG-SHIU;YANG, BARESI 发明人 CHEN, HOU;TSAI, MENG-SHIU;YANG, BARESI
分类号 G01N21/17 主分类号 G01N21/17
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