| 摘要 |
<p>A method for fabricating a semiconductor device is provided to improve an adhesive force between a photoresist and a metal line layer at the time of a photo process by applying a developer having an amine group on the metal line layer. A metal line layer for interlayer connection of a semiconductor device is formed on a substrate, and then a first photoresist is applied on the metal line layer. The first photoresist is removed to perform a rework after performing the first photo process. A developer having an amine group is applied on the metal line layer. A second photoresist is applied on the metal line layer, and then photo process is performed on the substrate using the second photoresist. The developer is made of TMAH(Tetramethylamine) having a molecular formula of N(CH3)4OH.</p> |
