| 摘要 |
<p>A method for forming a semiconductor device is provided to perform a spacer oxide layer treatment process in the lower part of a recess region by executing implanting after a spacer oxide layer is formed on a semiconductor substrate. A recess region(140) is formed by etching a gate region to be formed on a semiconductor substrate. A spacer oxide layer(150) is formed on the semiconductor substrate including the recess region. An implanting is executed on the semiconductor substrate. The spacer oxide layer in a lower part of the recess region is removed. By etching the lower part of the recess region, a bulb type recess region is formed. A gate for implanting the bulb type recess region is formed.</p> |
