| 摘要 |
A CuInS2/CuGaS2 heterojunction device is provided to generate photo electromotive force by using only ternary compound semiconductors and to be applied to various fields. A CuInS2/CuGaS2 heterojunction device includes a single phase p-type CuInS2 thin film and a single phase n-type CuGaS2 thin film. The CuInS2/CuGaS2 heterojunction device is manufactured by stacking the single phase n-type CuGaS2 thin film on the single phase p-type CuInS2 thin film by using a SEL method. The present invention is capable of establishing an optimum condition of manufacturing a quantum chemical single phase ternary compound semiconductor thin film. And also, the present invention can establish the manufacturing condition of CuInS2/CuGaS2 heterojunction device to generate photo electromotive force.
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