| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, such as a DRAM, capable of suppressing an excessive diffusion of a dopant in a source-drain diffusion layer in a peripheral circuit region, while heat treatment condition is adopted that is appropriate for the source/drain diffusion layer in a memory array region. <P>SOLUTION: The method of manufacturing the semiconductor device comprises a primary diffusion layer formation process of implanting the dopant into a silicon board 11 in a memory array region 10A, and of forming the source/drain diffusion layer corresponding to a gate electrode 14 in the memory array region 10A; a heat treatment process of diffusing the dopant in the source/drain diffusion layer in the memory array region 10A; and a secondary diffusion layer formation process of implanting the dopant into the silicon board 11 in peripheral circuit regions 10B, 10C, and of forming the source/drain diffusion layer corresponding to the gate electrode 14 in the peripheral circuit regions 10B, 10C. <P>COPYRIGHT: (C)2008,JPO&INPIT |
