发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE WITH DOUBLE-SIDED ELECTRODE STRUCTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor device with a double-sided electrode structure that can be simply manufactured without requiring a through-electrode technology, and to provide its manufacturing method. <P>SOLUTION: A circuit element including a semiconductor chip is arranged so as to be resin-molded. Each external connection electrode connected to the circuit element is arranged on both faces of the front face and the rear face. The circuit element is arranged on an organic substrate so as to connect it with a wiring pattern provided on the organic substrate. Each one end of a plurality of internal connection electrodes integrally composed by a connecting plate is connected to a prescribed position on the wiring pattern. After the circuit element is resin-molded, the front-face side is planarized by polishing or grinding the front-face side until the connecting plate is eliminated so as to compose a plurality of the internal connection electrodes into an individual internal connection electrode while separating a plurality of the internal connection electrodes from each other. Each of the other end of a plurality of the internal connection electrodes is used as the external connection electrode on the front face. Each external connection electrode on the rear face is connected to the wiring pattern via a conductive layer inside a through hole provided in the organic substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008016729(A) 申请公布日期 2008.01.24
申请号 JP20060188289 申请日期 2006.07.07
申请人 KYUSHU INSTITUTE OF TECHNOLOGY;HARIMA CHEM INC;SIJTECHNOLOGY INC 发明人 ISHIHARA MASAMICHI;KOYAMA MASAHIDE
分类号 H01L23/12;H01L23/50;H01L25/00 主分类号 H01L23/12
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