发明名称 |
Rate-enhanced CMP compositions for dielectric films |
摘要 |
The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.
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申请公布号 |
US2008020680(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20060491612 |
申请日期 |
2006.07.24 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
VACASSY ROBERT;BAYER BENJAMIN;CHEN ZHAN;CHAMBERLAIN JEFFREY P. |
分类号 |
B24B1/00;B24B7/30;B24D3/02;C09K3/14 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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