| 摘要 |
A method of fabricating a semiconductor device having a silicide layer, including forming an interlayer insulating layer on an entire surface of a semiconductor substrate, forming a contact hole in the interlayer insulating layer, sequentially forming a silicide material and a barrier metal layer over the interlayer insulating layer including the contact hole, and performing an annealing process on the interlayer insulating layer to thereby form the silicide layer between a bottom surface of the interlayer insulating layer, which is exposed by the contact hole, and the silicide material.
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