A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SEMICONDUCTOR WAFER,申请号KR20027000322-传众专利搜索

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发明名称	A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SEMICONDUCTOR WAFER
摘要
申请公布号	KR100797929(B1)	申请公布日期	2008.01.24
申请号	KR20027000322	申请日期	2002.01.09
申请人		发明人
分类号	H01L21/205;(IPC1-7):H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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