| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of reducing driving voltage and inhibiting leakage current. <P>SOLUTION: The semiconductor light emitting element A includes an active layer 3 sandwiched between an n-GaN layer 2 and a p-GaN layer 4, an n-side electrode 5, a p-side electrode 6, and an insulation layer 7. The n-side electrode 5 is constituted of an Al layer 51 in contact with the n-GaN layer 2, and an Ni layer 52 formed on the Al layer 51. The p-side electrode 6 is constituted of an Au layer 61 in contact with the p-GaN layer 4 and an Ni layer 62 formed on the Au layer 61. <P>COPYRIGHT: (C)2008,JPO&INPIT |
