| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having the stacked memory cell structure which can prevent the generation of the contact faultiness caused by a heat treatment performed under an oxygen atmosphere. <P>SOLUTION: The semiconductor device has: first and second conductive layers (103a), (103b) present on a substrate (101); a first insulating film (104); first and second plugs (106a), (106b); a first metal film (107a) connected electrically with the first plug (106a); a second metal film (107b) connected electrically with the second plug (106b); a metal oxide film (109) having an opening (109a) of subjecting the second metal film (107b) to an exposure; and a third metal film (110) formed on the metal oxide film (109). The second metal film (107b) is connected with the third metal film (110) via the opening (109a), and the second metal film (107b) and the metal oxide film (109) exist in series on the second plug (106b). <P>COPYRIGHT: (C)2008,JPO&INPIT |
