| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve large capacity of a memory device employing a resistance change memory cell. <P>SOLUTION: A memory element 100 has a metal oxide layer 102 composed of bismuth (Bi), titanium (Ti) and oxygen and having a film thickness of 30-200 nm, and an upper electrode 103 formed on a semiconductor substrate 101; and has an ohmic contact 104 at a part of the semiconductor substrate 101. The metal oxide layer 102 is formed on the semiconductor substrate 101 in contact therewith. For example, the metal oxide layer 102 is composed of a plurality of microcrystal grains of stoichiometric composition of Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>on the order of 3-15 nm, in a base layer containing superfluous Ti as compared with stoichiometric composition of Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>. The metal oxide layer 102 is formed by sputtering under low temperature conditions of 30-180°C. <P>COPYRIGHT: (C)2008,JPO&INPIT |
