| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device (static random access memory) in which an integration degree is improved without using a manufacturing process difficult to be executed. <P>SOLUTION: The device is provided with a plurality of memory cells each having: a first inverter formed of a first memory node ND having a first n-channel transistor (DTr1) and a first p-channel transistor (LTr1) on a semiconductor substrate 10; and a second inverter formed of a second memory node ND having a second n-channel transistor (DTr2) and a second p-channel transistor (LTr2). In this device, the bottom surface of a second gate electrode 22b constituting the second p-channel transistor (LTr2) directly contacts the semiconductor substrate on a source/drain region of the first p-channel transistor (LTr1) as the first memory node ND, and a relationship is the same between the bottom surface of a first gate electrode 22a and a source/drain region of the second p-channel transistor (LTr2). <P>COPYRIGHT: (C)2008,JPO&INPIT |
