| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a phase change memory element with a doped phase change layer, and to provide a method for operating the same. <P>SOLUTION: The phase change memory element has a storage node with the phase change layer, and a switching element. The phase change layer includes In, and the content (a1) of the In is 5<a1<15 atomic%. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
