| 摘要 |
There is disclosed a semiconductor device including a plurality of memory cell transistors, each memory cell transistor including a floating gate electrode isolated from each other via an isolation insulating film every memory cell transistor, an inter-electrode insulating film comprising a Hf<SUB>x</SUB>Al<SUB>1-x</SUB>O<SUB>y </SUB>film (0.8<=x<=0.95) formed on the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein the memory cell transistors are arrayed to form a memory cell array.
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