发明名称 |
MAGNETO-RESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY |
摘要 |
It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.
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申请公布号 |
US2008019058(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20070862966 |
申请日期 |
2007.09.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO YOSHIAKI |
分类号 |
G11B5/33;G11C11/15;G11C11/16;G11C11/22;H01F10/14;H01F10/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/10 |
主分类号 |
G11B5/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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