发明名称 METHOD FOR PROCESSING OUTER PERIPHERY OF SUBSTRATE AND APPARATUS THEREOF
摘要 To enhance a removing efficiency of unnecessary matters on a peripheral part of a substrate ( 90 ) such as wafer and to prevent particles from adhering to the substrate ( 90 ). A reactive gas is jetted out from a jet nozzle ( 75 ) toward a target spot (P) of the peripheral part of the substrate ( 90 ) in such a way that the reactive gas is made to flow approximately along a circumferential direction at the target spot (P) of the substrate ( 90 ) as viewed from a direction orthogonal to the substrate ( 90 ). Gases near the target spot (P) are sucked by a suction nozzle ( 76 ) along approximately the circumferential direction at a downstream side of the target spot (P).
申请公布号 US2008017613(A1) 申请公布日期 2008.01.24
申请号 US20070779142 申请日期 2007.07.17
申请人 SEKISUI CHEMICAL CO., LTD. 发明人 NOGAMI MITSUHIDE;HASEGAWA TAIRA;KUNUGI SYUNSUKE
分类号 C23C16/00 主分类号 C23C16/00
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