发明名称 |
METHOD FOR PROCESSING OUTER PERIPHERY OF SUBSTRATE AND APPARATUS THEREOF |
摘要 |
To enhance a removing efficiency of unnecessary matters on a peripheral part of a substrate ( 90 ) such as wafer and to prevent particles from adhering to the substrate ( 90 ). A reactive gas is jetted out from a jet nozzle ( 75 ) toward a target spot (P) of the peripheral part of the substrate ( 90 ) in such a way that the reactive gas is made to flow approximately along a circumferential direction at the target spot (P) of the substrate ( 90 ) as viewed from a direction orthogonal to the substrate ( 90 ). Gases near the target spot (P) are sucked by a suction nozzle ( 76 ) along approximately the circumferential direction at a downstream side of the target spot (P). |
申请公布号 |
US2008017613(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20070779142 |
申请日期 |
2007.07.17 |
申请人 |
SEKISUI CHEMICAL CO., LTD. |
发明人 |
NOGAMI MITSUHIDE;HASEGAWA TAIRA;KUNUGI SYUNSUKE |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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