发明名称 STACKED ELECTRO-OPTICALLY ACTIVE ORGANIC DIODE WITH INORGANIC SEMICONDUCTOR CONNECTION LAYER
摘要 <p>A stacked electro-optically active organic diode has an anode electrode (102), a cathode electrode (162), a first electro-optically active organic layer (110) arranged between the electrodes (102, 162), and a second electro-optically active organic layer (130) arranged between said first active organic layer (110) and said cathode (162). A low electron affinity layer (120) is arranged between the first electro-optically active organic layer (110) and the second electro-optically active organic layer (130), and is formed of a first transparent inorganic semiconductor material. A high electron affinity layer (121) is arranged between said second electro-optically active organic layer (130) and the low electron affinity layer (120), and is formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material. The low and high affinity layers (120, 121) constitute a connection layer of only two semiconductor (sub-)layers which allow for transparent, thick layers, and as a result the diode can be both efficient and reliable.</p>
申请公布号 WO2008010161(A2) 申请公布日期 2008.01.24
申请号 WO2007IB52785 申请日期 2007.07.12
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;BUECHEL, MICHAEL 发明人 BUECHEL, MICHAEL
分类号 H01L51/52 主分类号 H01L51/52
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