FILM FORMING METHOD AND FILM FORMING APPARATUS

摘要

A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with vapor and a material gas composed of an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.