发明名称 THIN FILM TRANSISTOR SUBSTRATE AND REPAIRING METHOD THEREOF
摘要 A TFT(Thin Film Transistor) substrate and a repair method thereof are provided to include a subsidiary connection member for performing a repair process when generating the short between a gate line and a data line. A data line(200) is insulated and crossed by a gate line. A TFT is formed at the crossing portion of the gate line and data line. A pixel electrode(400) is connected with the TFT. A main connection member connects the data line with a source electrode of the TFT. A subsidiary connection member(100) is located oppositely to the main connection member by interposing the gate line and connects the data line with the source electrode of the TFT. The subsidiary connection member is formed on the same plane with the same materials as the source and drain electrodes of the TFT. When the short between a gate electrode and either the source or drain electrodes occurs, the subsidiary connection member and the main connection member are opened by a laser irradiation process.
申请公布号 KR20080008598(A) 申请公布日期 2008.01.24
申请号 KR20060068042 申请日期 2006.07.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, IN WOO;YANG, BYUNG DUK;PARK, MIN WOOK;SOHN, WOO SUNG;CHOO, MIN HYUNG;JUNG, KYUNG SUK
分类号 G02F1/136 主分类号 G02F1/136
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