发明名称 PHASE CHANGE MEMORY CELL INCLUDING NANOCOMPOSITE INSULATOR
摘要 <p>A phase change memory cell including a nano-composite insulator is provided to reduce the size of a memory by inducing low power for driving small devices. A phase change memory cell includes first and second electrodes(208,210), a store material, and a nano-composite insulator(218). The store material is formed between the first and second electrodes. The nano-composite insulator is contacted with the store material. The store material is a phase change memory material. The nano-composite insulator includes nano-composite clusters which define the size of the clusters with 1 to 5nm. The nano-composite insulator is deposited as a layer having a thickness of 5 to 30nm.</p>
申请公布号 KR20080009023(A) 申请公布日期 2008.01.24
申请号 KR20070073077 申请日期 2007.07.20
申请人 QIMONDA NORTH AMERICA CORP. 发明人 HAPP THOMAS;PHILIPP JAN BORIS
分类号 H01L27/115;B82B3/00;H01L21/8247 主分类号 H01L27/115
代理机构 代理人
主权项
地址