发明名称 |
PHASE CHANGE MEMORY CELL INCLUDING NANOCOMPOSITE INSULATOR |
摘要 |
<p>A phase change memory cell including a nano-composite insulator is provided to reduce the size of a memory by inducing low power for driving small devices. A phase change memory cell includes first and second electrodes(208,210), a store material, and a nano-composite insulator(218). The store material is formed between the first and second electrodes. The nano-composite insulator is contacted with the store material. The store material is a phase change memory material. The nano-composite insulator includes nano-composite clusters which define the size of the clusters with 1 to 5nm. The nano-composite insulator is deposited as a layer having a thickness of 5 to 30nm.</p> |
申请公布号 |
KR20080009023(A) |
申请公布日期 |
2008.01.24 |
申请号 |
KR20070073077 |
申请日期 |
2007.07.20 |
申请人 |
QIMONDA NORTH AMERICA CORP. |
发明人 |
HAPP THOMAS;PHILIPP JAN BORIS |
分类号 |
H01L27/115;B82B3/00;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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