| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect a voltage during reflowing and to shunt a current to a Schottky barrier diode SBD by turning on an SiC-FET when the voltage is higher than a threshold so as to solve the problem that although an SiC semiconductor device as a switching element is used for an electric power converter which drives and controls a load such as a motor, a technique of providing the SBD as a reflow diode in order to prevent a current from reflowing to a body diode in the SiC semiconductor device to advance crystal deterioration of the SiC semiconductor device does not provide sufficient constitution for an increase in return current. <P>SOLUTION: The voltage of the SBD is detected, and the SiC-FET of the SiC semiconductor device is turned ON when the voltage rises above a threshold between the ON start voltage value of the SBD and the ON start voltage value of the body diode present in the SiC semiconductor device, and turned OFF when the voltage of the SBD falls below a threshold which is smaller than the detection-time voltage and larger than 0V. <P>COPYRIGHT: (C)2008,JPO&INPIT |
