| 摘要 |
PROBLEM TO BE SOLVED: To provide an interlayer interconnection of a semiconductor device using a carbon nanotube, and to provide its manufacturing method. SOLUTION: The interlayer interconnection of the semiconductor device using the carbon nanotube has a lower electrode, a catalyst layer for the carbon nanotube growth prepared so as to connect with the lower electrode electrically, a carbon nanotube bundle which comprises a plurality of carbon nanotubes growing up from the surface of the catalyst layer, in which the density in number of the upper end portion is higher than the density in number of the lower end portion, an interlayer insulating layer which encloses the carbon nanotube bundle, and an upper electrode arranged so as to connect with the upper end portion of the carbon nanotube bundle electrically on the interlayer insulating layer. COPYRIGHT: (C)2008,JPO&INPIT |
