| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline silicon film by which uniformity can be improved in crystal grain size of the polycrystalline silicon film formed by laser annealing. SOLUTION: The polycrystalline silicon film is formed by crystallizing an amorphous silicon film of 60 nm or more in thickness which is formed on a substrate by laser annealing, whereby laser with wavelengths of 390 nm to 640 nm (YAG2ωlaser, for example) is applied in an atmosphere under an oxygen partial pressure of 2 Pa or less. In this case, an irradiation energy density (for example, within a range Rg of 0.366 to 0.378 J/cm<SP>2</SP>) of laser is selected so that the average crystal grain size of the polycrystalline silicon film formed by laser annealing may be within a range of 0.28μm±0.03μm. The polycrystalline silicon film is manufactured from the amorphous silicon film by performing laser annealing at the selected irradiation energy density. In this way, the polycrystalline silicon film which exhibits a small standard deviation relative value of crystal grain size can be formed and the uniformity of its crystal grain size can be improved. COPYRIGHT: (C)2008,JPO&INPIT
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