发明名称 Tantalum CMP compositions and methods
摘要 A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises about 0.1 to about 10 percent by weight of a zirconia or fumed alumina abrasive, about 0.1 to about 10 percent by weight of an alkali metal iodate salt and an aqueous carrier. The composition has a pH of at least about 10. The composition is utilized to polish a surface of a tantalum-containing substrate.
申请公布号 US2008016784(A1) 申请公布日期 2008.01.24
申请号 US20060489054 申请日期 2006.07.19
申请人 LI SHOUTIAN 发明人 LI SHOUTIAN
分类号 B24D3/02 主分类号 B24D3/02
代理机构 代理人
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