| 摘要 |
A CMOS image sensor and a method for manufacturing the same are provided to enhance the reliability of the CMOS image sensor by preventing the unbalance of dopants injected in a substrate. A CMOS(Complementary Metal Oxide Semiconductor) image sensor includes a substrate(201), a shallow trench isolation layer(210), a nitride layer(212), an N type photodiode doping region(203), a P type photodiode doping region(204), and a gate oxide layer(205) and a gate electrode(206). The shallow trench isolation is formed on the substrate. The nitride layer is formed between the shallow trench isolation and substrate. The N type photodiode doping region is formed by N type dopants on the photodiode area of the substrate. The P type photodiode doping region is formed by P type dopants on the dopant area of the N type photodiode doping region. The gate oxide layer and gate electrode form a gate stack on the substrate.
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