| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent partially silicide on a gate by removing salicide from an upper portion of the gate using a tungsten touch up scheme. A gate oxide layer(14) and a polysilicon layer are stacked on a substrate(10). A spacer is formed at a side wall of the polysilicon layer. Source and drain areas(24) are formed by injecting conductive dopant ion into the substrate. A first metal layer is formed on the substrate and then a salicide process is executed by thermal treatment. The first metal layer where a salicide process is not executed, is removed. Nitride and intermediate layers(28,30) are formed on the substrate. By chemical mechanical polishing, a salicide is removed from a gate. A second metal layer is formed on the substrate and then salicide process on the gate is executed by thermal treatment. Then, the second metal layer where a salicide process is not executed, is removed.</p> |
