| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method which stably and accurately evaluates electric characteristics in a predetermined direction, particularly, along a predetermined plane direction. SOLUTION: The evaluation method of an SOI wafer using a pseudo MOSFET comprises steps of: processing an SOI layer of the SOI wafer; producing a MESA structure at least along a predetermined direction; forming a metal electrode at opposite ends of the MESA structure along the predetermined direction; bringing a measurement probe into contact with the metal electrode; and conducting a drain current in a predetermined direction by limiting a current path with the MESA structure along the predetermined direction. COPYRIGHT: (C)2008,JPO&INPIT
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