| 摘要 |
PROBLEM TO BE SOLVED: To provide a stripping method for photoresist by which a photoresist used when ions are implanted by high implant dose can be easily stripped without leaving residue. SOLUTION: This method includes a step for forming, on a specified material layer 21, a photoresist pattern which exposes the part where the ions are implanted, a step for ion-implanting impurity elements into the specified material layer 21 with the photoresist pattern as an ion implantation barrier, and a step for stripping the photoresist pattern by using plasma of a mixed gas containing at least a hydrocarbon-based gas. COPYRIGHT: (C)2008,JPO&INPIT
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