| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology to improve the unevenness in dry etching caused by the hygroscopicity of a low dielectric constant film. SOLUTION: When processing an object 52 to be processed which is an insulation film made of a low dielectric constant material by dry etching with a resist pattern as a mask, water vapor is added at a flow rate of 3 sccm to gases introduced into a vacuum chamber 51 of an etching apparatus 50, to suppress a change in etching properties of the insulation film which depends on an amount of water vapor which desorbs from the insulation film made of the low dielectric constant material. COPYRIGHT: (C)2008,JPO&INPIT
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