| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device where capacity can be enlarged between a floating gate electrode and a control gate electrode and a data holding characteristic can be improved. SOLUTION: The non-volatile semiconductor storage device is provided with a memory cell transistor CT comprising the floating gate electrode 15 arranged on a semiconductor substrate 11 through a tunnel insulating film 14, an inter-gate insulating film 16 disposed on the floating gate electrode 15, and a control gate electrode 22 arranged on the inter-gate insulating film 16. The inter-gate insulating film 16 sequentrally laminates a first silicon oxide film 17, a first aluminum oxide film 18 to which hafnium is added, a second aluminum oxide film 19, a third aluminum oxide film 20 to which hafnium is added, and a second silicon oxide film 21. COPYRIGHT: (C)2008,JPO&INPIT
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