| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving wiring reliability by suppressing the oxidation and corrosion of wiring even at a region where an actual pattern is formed. SOLUTION: First wiring 30 is formed on a substrate; a first contact layer 31 is formed on the upper layer of the first wiring 30 while being connected to the first wiring 30; a second contact layer 32 is formed in a ring shape while being separated from the first contact layer 31 at the outer periphery of the first contact layer 31; second wiring 33 is formed on the upper layer of the first and second contact layers 31, 32 while being connected to the first contact layer 31; and an insulation layer containing an insulation material having lower permittivity than silicon oxide is formed at the gap among the first wiring 30, the first contact layer 31, the second contact layer 32, and the second wiring 33. COPYRIGHT: (C)2008,JPO&INPIT
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