| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a gate insulation film with a low on-resistance, a high insulation and a high reliability, by forming a good insulation film having a uniform thickness. SOLUTION: The manufacturing method comprises steps of: preparing semiconductor material-made semiconductor substrates (1, 2); and forming a hetero-semiconductor region 3 on the substrates (1, 2) so as to form a hetero-junction on the boundary of the substrates (1, 2). The region 3 is made of a semiconductor material having a band gap different from the semiconductor material, and has a thinner film thickness controlled unit 21 than other portions. By oxidizing the semiconductor resistance 3 by the film thickness of the controlled unit 21, a gate insulation film 4 is formed adjacent to the hetero-junction, and a gate electrode 5 is formed on the gate insulation film 4. COPYRIGHT: (C)2008,JPO&INPIT
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