| 摘要 |
PROBLEM TO BE SOLVED: To provide an internal voltage generating device of a semiconductor element, wherein discharge reference voltage is set at a desired voltage level in accordance with current quantity supplied to a core voltage end by generating discharge reference voltage in which delay of response speed of a core voltage discharge part is considered and applying it to the core voltage discharge part. SOLUTION: The internal voltage generating device of the semiconductor element is provided with a core voltage end, a first reference voltage generating means generating first reference voltage, a second reference voltage generating means having a test/option processing part generating second reference voltage having a higher voltage level than the first reference voltage and setting the second reference voltage to either of a plurality of voltage levels, a core voltage drive means receiving the first reference voltage and driving the core voltage end, and a core voltage discharge means receiving the second reference voltage and discharging the core voltage end. COPYRIGHT: (C)2008,JPO&INPIT
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