| 摘要 |
An integrated circuit having a semiconductor device with reduced "tail" resistance and production method for such a device is disclosed. One embodiment provides at least one substrate of a first conduction type doped with a first concentration of donors of a first atom type, and a first epitaxial layer of the first conduction type doped with a second concentration of first donor atoms. A second epitaxial layer of the first conduction type doped with a third concentration of donors of a second atom type is formed between the first epitaxial layer and the substrate.
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