发明名称 |
PATTERN INSPECTION AND MEASUREMENT APPARATUS |
摘要 |
Pattern inspection and measurement technique where the failure of the detection of a secondary signal due to the variation of an optical condition of a primary electron beam or the occurrence of an electric field perpendicular to a traveling direction of the primary electron beam in a surface of a wafer is minimized, an SEM image the SN ratio of which is high and which hardly has shading in a field of view can be acquired and measurement such as measuring the dimensions and configuration of a measured object and inspecting a defect is enabled at high precision and high repeatability. A lens for converging a secondary signal is installed in a position which a traveling direction of the primary electron beam crosses or on a course of the secondary signal spatially separated from the primary electron beam by Wien filter. An SEM image always free of shading caused by the failure of the detection of a secondary signal in the field of view can be acquired by providing a unit that changes the setting of the lens according to the optical condition such as retarding voltage and an electrification control electrode of the primary electron beam.
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申请公布号 |
US2008017797(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20070779140 |
申请日期 |
2007.07.17 |
申请人 |
CHENG ZHAOHUI;MAKINO HIROSHI;TANIMOTO KENJI;OMORI SEIKO |
发明人 |
CHENG ZHAOHUI;MAKINO HIROSHI;TANIMOTO KENJI;OMORI SEIKO |
分类号 |
G01N23/00;G01N23/225;G03F1/84;G03F1/86;H01J37/10;H01J37/244;H01J37/28;H01L21/027;H01L21/66 |
主分类号 |
G01N23/00 |
代理机构 |
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