| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus manufacturing method which can reduce a junction leakage current on a floating diffusion layer with a silicide formed on its surface, and control the development of a white defect etc. and a solid-state imaging apparatus. <P>SOLUTION: A first impurity area 22 composing a floating diffusion layer 60 is formed by an ion implantation. A second impurity area 72 composing a source area or a drain area of a transistor belonging to a surrounding circuit is formed by an ion implantation. Then, compound layers 24, 74 between component element of a semiconductor substrate 3 and high-melting-point metal element are formed on the surfaces of the first impurity area 22 and second impurity area 72. The ion implantation for forming the first impurity area 22 softens a stress caused from a mismatch between a lattice constant of the compound layer 24 and that of the semiconductor substrate 3, and is carried out in a condition that an atom does not form a cluster between lattices developed in the semiconductor substrate 3. <P>COPYRIGHT: (C)2008,JPO&INPIT |
