| 摘要 |
A semiconductor memory device controlling an output voltage level of a high voltage generator according to a variation of temperature has a high voltage generator that provides a high voltage higher than a power source voltage through an output terminal, generates a temperature detection signal obtained by sensing a variation of a diode current according to a temperature variation, and adjusts a voltage level of the output terminal in response to the temperature detection signal. The device is able to automatically control an output voltage or current of the high voltage generator. Accordingly, it is possible to control fluctuation of output voltage level or current level due to a voltage variation, thereby lessening degradation of program or erasure characteristics of memory cells that is caused from the fluctuation of the output voltage or current.
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